ABSTRACT
The AlGaN-based deep ultraviolet lightemitting diodes (DUV LEDs) for the disinfection of SARS-2 (Covid-19) are proposed in this study. The optoelectronic characteristics of DUV LEDs are numerically analyzed. The results show that the internal quantum efficiency (IQE) and radiative recombination rate are excellently improved in the proposed LED. This significant enhancement is due to the optimal recombination of electron- hole pairs in the active region. This is attributed to the increase of potential barrier height for electron, which suppress the electron leakage effectively. Moreover, due to the decrease of lattice mismatch between the last quantum barrier (LQB) and EBL ease the holes transportation to the active region. Therefore, based on these results, we highly believe that this study provides a novel approach for highly efficient DUV LEDs (222 nm) for the disinfection of severe SARS-2 (Covid-19) infection.